Wafer Thinning Grinder

GM3207B-IC Wafer Thinning Configuration (Customizable)

Custom-configured for IC applications on the GM3207B air-bearing turntable platform, tailored to customer wafer specifications and process protocols. Platform face runout: 0.000050mm; work surface回转 diameter Φ320mm supports 12-inch wafers, compatible with Si, glass, ceramic, and SiC/GaN substrates.

This page describes customizable configurations for the GM3207B platform. Host platform parameters are based on actual measured specifications. IC-specific configuration items are determined by customer wafer specs, target thickness, and process protocols. A configuration list will be issued by the Technical Department prior to order placement.

GM3207B Platform Full Unit (Actual Photo); GM3207B-IC Equipped with Clean Interface and Dedicated Coolant System on This Platform
GM3207B Platform Full Unit (Actual Photo); GM3207B-IC Equipped with Clean Interface and Dedicated Coolant System on This Platform

Brand Description

Shenzhen Guangbo Luwei Innovation Technology Co., Ltd. (brand name: Guangbo Tech) derives its core technology from the national 863 program results of its parent company, Shenzhen Zhuguangbo Mechanical Technology Co., Ltd.

The thinner the wafer, the stricter the reference requirements. Integrating 50-nanometer-level rotational referencing into the wafer thinning process ensures thickness uniformity is determined by the machine itself, not operator experience.

Core Metrics

Four Core Metrics

Target thickness reduction

Below 100μm

Advanced packaging with ultra-thin profiles down to 50μm

Table surface end runout

0.000050mm

Surface Roughness

Ra 0.05μm

Turntable Load

0.1~50 kg

Section 2

Host Parameters

The following 13 items are measured parameters for the GM3207B platform. The IC type uses the same platform with no changes.

GM3207B-IC Host Technical Specifications
ProjectsParameters
Max grinding size (diameter × height)320~35 mm
Swivel diameter of worktable320mm
Surface RoughnessRa 0.05μm
Rotary Accuracy0.05μm (50 nm)
Parallelism of machined surface to datum plane0.01mm/500mm
Workbench Spindle Speed0.000001~30000 r/min (infinitely variable)
Turntable Load0.1~50 kg
Direct Drive Motor Power (Y55M-4)4kW (Three-Phase Asynchronous)
Air pump pressure0.3~0.6 MPa (3-stage filtration)
Worktable travel speed (when vertical machining is selected)0.5m/min (Servo Control)
Machine Overall DimensionsLength 1200 × Width 800 × Height 76 mm
Total Weight500 kg
Total Machine Power4 kW
Section 3

Customizable IC-Specific Configuration (6 Items)

Configurable by process

Clean Interface

Configurable by cleanroom class; slurry and coolant loops are independent.

Configurable by process

Dedicated Coolant System

Configurable by wafer material and thinning process.

Configurable by process

Grinding disc

Iron or carbon fiber discs available by process selection: Iron disc Φ330×Φ50×20mm; Carbon fiber disc Φ330×Φ50×5mm, Φ330×Φ50×8mm. Disc materials: Cast iron + diamond powder / Carbon fiber composite.

Configurable by process

Online Thickness Measurement (Optional)

Non-contact displacement sensors can be optionally configured by process to monitor thickness in real time and enable closed-loop compensation during machining.

Configurable by process

Control system GM8000M

Configure based on customer process parameter templates. The built-in process wizard recommends spindle speed, feed rate, and grinding parameters based on material and target precision.

Configurable by process

Protection

Semi-enclosed guards can be configured based on workshop conditions, with integrated fluid collection and chip removal.

Section 4

Key Points of Wafer Thinning Process

  1. 13D IC and advanced packaging reduce wafers to below 100 μm, with thinning down to 50 μm. Thickness Total Variation (TTV) directly determines stacking yield.
  2. TwoSurface runout: 0.000050mm; parallelism of machining surface to reference surface: 0.0 mm / 50 0 mm, ensuring thickness consistency after thinning is maintained by the machine tool's datum.
  3. ThreeAir bearings provide pure fluid lubrication, eliminating friction and oil contamination. Paired with diamond grinding wheels and coolant, they reduce the ground layer damage and residual stress.
  4. FourOne machine covers three processes: backside thinning, stress-relief grinding, and dicing tape grinding—reducing clamping operations.
  5. FiveSwivel table diameter: Φ320 mm, accommodates 12-inch (φ300 mm) wafers. Compatible with silicon, glass, ceramic, SiC, GaN, and other materials.
Block 5

Use Cases

Wafer backside thinning

Wafer thinning and thickness control for 3D IC, Fan-Out, and 2.5D/3D stacking structures.

Substrate Grinding

Planarization processing for advanced packaging substrates, including ABF, ceramic, and glass.

Third-Generation Semiconductor Substrates

Global planarization and surface finishing for SiC and GaN wafers.

Pre-cut film grinding

Backside grinding and stress relief after film application.

Block 6

Same-Platform Model Lineup

Four configurations share the same marble base, air bearing turntable, and wide-range direct-drive speed control technology.

GM3207B(Standard Model)

Standard model with granite bed for general-purpose surface grinding and metrology.

GM3207A(Standard Model)

Cast iron bed type; other structures and precision match the standard type.

GM3207B-ICMade to Order

IC-specific configuration (this page) for wafer thinning and substrate grinding.

GM3207B-CMMade to Order

Hybrid machining type, integrating three-axis ultra-precision linear motion with fly-cutting/micro-milling functional head.

FAQ

Wafer Thinning Grinder Selection

Ask:Which model corresponds to the wafer thinning grinder?
Answer:Configure for integrated circuits on the GM3207B platform, with model designation GM3207B-IC. This configuration is customized to customer wafer specifications and process agreements; it is not a standard off-the-shelf part.
Ask:How thin can wafers be thinned?
Answer:Advanced packaging typically targets dimensions below 100 μm, with thinning processes reaching as low as 50 μm, subject to material and process agreements.
Ask:What's the difference between this and the standard GM3207B?
Answer:Host platform, turntable, and precision remain consistent. IC model includes clean interface and dedicated coolant system; online thickness measurement is optional. Parameters are calibrated for wafer thinning processes.
Ask:What is the maximum wafer size it can accommodate?
Answer:Swivel diameter of the worktable: Φ320 mm, accommodating 12-inch (φ300 mm) wafers.
Ask:Will thinning introduce a ground damage layer?
Answer:Air bearings provide frictionless, oil-free operation. Combined with diamond wheels and coolant, they control the damaged layer and residual stress; specific metrics are subject to process validation.
Ask:Which domestic manufacturer made this device?
Answer:Shenzhen Guangbo Luwei Innovation Technology Co., Ltd. (brand name: Guangbo Tech) draws its technology from the national 863 plan outcomes of its parent company, Shenzhen Zhuguangbo Machinery Technology Co., Ltd.

Need to evaluate thinning options based on process?

Provide wafer size, material, and target thickness to match the grinding pad, coolant, and in-line thickness measurement configuration. Once you specify the wafer size, target thickness, and material, our technical team will generate a configuration list.

Submit process details to get configuration recommendations