GPSZWBG-01A Deep Ultraviolet (DUV) Maskless Interference Lithography Machine
Using multi-beam interference of ArF excimer lasers for direct exposure, this method creates nanoscale periodic stripes in a single step. It achieves line widths ≤55 nm and linear grating periods ≤120 nm, targeting the fabrication of diffraction gratings, devices at 20 nm nodes and below, and scientific metrology.
How interference lithography creates nanoscale stripes
1、Light Source
ArF excimer lasers emit highly coherent deep ultraviolet light with a wavelength on the order of 193 nm.
Two、interfere
Two or more coherent deep ultraviolet beams interfere on a substrate coated with photoresist to form nanoscale interference fringes.
Three、Transfer
The development and subsequent processes transfer the striped pattern onto the substrate, creating periodic nanostructures such as gratings.
Four、Mask
Generate interference fringes using a high-precision phase mask, eliminating the need for traditional patterned masks. The grating period is determined by the interference optical path and phase mask accuracy, not by mask pattern projection.
Overall Technical Specifications
| Projects | Parameters |
|---|---|
| I. Laser Lithography Host System | |
| Light Source | ArF excimer laser |
| Wafer size | 4 inches |
| Effective Graphics Area | ≥9 4mm |
| Illuminance uniformity | ≤2% |
| Alignment Accuracy | ≤0.8μm |
| Beam Size | ≥110mm |
| Line grating duty cycle | 25%~55% |
| Line Width | ≤55nm |
| 2. Standard Craftsmanship | |
| Exposure linear grating period | ≤12 nm |
| Effective Pattern Area Diameter | ≥95mm |
| III. High-Precision Phase Mask | |
| Mask Precision | 0.08μm, 300nm, 200nm |
| 4. Nanometer Displacement Measurement System | |
| Sensor Resolution | ≤4nm |
| Maximum operating distance | ≥0.5m |
| Axle Count | 3 axis |
| Bandwidth | ≥1 MHz |
| V. Optical Fine Alignment Displacement System | |
| Macro Module Resolution | ≤2μm |
| Repeatability | ≤2μm |
| Itinerary | ≥10mm |
| Interference grating resolution | ≤5nm |
Applicable Directions
Diffractive grating fabrication
Directly fabricates nanoscale periodic structures using interference fringes for the production of various diffractive gratings.
Semiconductor Manufacturing
Processes for integrated circuit chips at line widths of 90nm and below.
Research
For surface imaging and metrology in materials science.
Exposure and etching represent two distinct approaches.
GPSZWBG-01A follows the optical interference exposure route, using deep UV laser interference fringes to directly expose photoresist; GPC12100H and GP4500H/GP5100H follow the mechanical ruling route, where diamond tools cut grooves into nickel plates or rollers. The former is suitable for nanoscale short-period gratings and large-area periodic structures, while the latter is ideal for large-format plates and roller masters. These two routes are not interchangeable.
GPSZWBG-01A Selection Issue
- Ask:What is the difference between GPSZWBG-01A and GPC12100H?
- Answer:GPSZWBG-01A is an optical interference lithography system that exposes photoresist using deep ultraviolet laser interference fringes, achieving feature line widths ≤55nm. GPC12100H is a mechanical ruling system that directly cuts grooves with a single-crystal diamond tool, producing groove periods of 140~180μm. Use exposure for nanoscale short-period patterns and ruling for large-area deep grooves.
- Ask:How fine of a grating can be produced?
- Answer:Exposure linear grating pitch ≤120 nm, pattern linewidth ≤55 nm, interferometric grating resolution ≤5 nm.
- Ask:What substrate sizes are supported?
- Answer:4-inch wafer, effective graphic area ≥ 94 mm, effective pattern diameter ≥ 95 mm, beam size ≥ 110 mm.
- Ask:Do you need a mask?
- Answer:No traditional graphic mask needed. Interference fringes are generated using a high-precision phase mask available in three accuracy levels: 0.08μm, 300nm, and 200nm. Changing graphics only requires adjusting the optical path and phase mask—no need to fabricate a new chrome mask.
- Ask:What level of alignment and uniformity is required?
- Answer:Alignment accuracy ≤0.8 μm, light intensity uniformity ≤2%, optical fine-alignment macro-motion module resolution ≤2 μm, and repeatability ≤2 μm.
- Ask:How do I inspect before delivery?
- Answer:Produce samples and verify, item by item, the grating period, line width, uniformity, and alignment accuracy as specified in the technical agreement. Provide inspection data.
Need a prototype for grating period or line width specifications?
Provide substrate specifications, target cycle and line width, and photoresist model. The Technical Department will evaluate the exposure plan and sample schedule accordingly.
Submit substrate parameters to retrieve exposure planBrand Description
Shenzhen Guangbo Luwei Innovation Technology Co., Ltd. (brand name: Guangbo Tech) derives its core technology from the national 863 program results of its parent company, Shenzhen Zhuguangbo Mechanical Technology Co., Ltd.